ABSTRACT & BIOGRAPHY
200mm SiC Substrate development and 300mm SiC opportunities & challenges
Abstract:
Technical development of large-sized SiC substrates will be presented in the meeting. Progress of 200 mm SiC substrate in volume production as well as the technical focus from both material and device side will be elaborated.
Besides, 300 mm SiC substrates is developed and the progress will be presented. The challenges and opportunities of 300 mm in the industry is to be discussed.
Biography:
Dr. Gao Chao, born in 1987, Chinese, PhD degree, doctor of engineering, majoring in materials physics and chemistry, graduated in 2014 from State key laboratory of silicon materials in Zhejiang university.
From November 2020 to present, he has been the chief technology officer of SICC, director of Shandong provincial key lab of SiC materials, state council special allowance expert.
