The 37h International Symposium on Power Semiconductor Devices and ICs

Date: June 1-5, 2025 _ Venue: Kumamoto-Jo Hall, Kumamoto, Japan
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KUMAMON

kumamoto image ISPSD2025

CALL FOR PAPERS

MAIN CATEGORIES OF INTEREST INCLUDE:

High Voltage Power Devices

High voltage silicon based discrete devices (>200V) such as SJ-MOSFETs, IGBTs, thyristors and pn-diodes

Low Voltage Power Devices and Power IC Technology

Low voltage silicon based discrete power devices (<200V) and devices for power ICs of all voltage ranges

Power IC Design

Circuit design and demonstration using power IC technology platform

GaN and Compound Materials

GaN and compound semiconductor (e.g., AlN, GaAs) based power devices, technology and integration

SiC and Other Materials

SiC and other materials (e.g., Ga2O3, diamond) based power devices, technology and integration

Module and Packaging Technologies

Module and package technology for discrete power devices and power ICs

PAPER SUBMISSION

IMPORTANT: ISPSD2025 will change the paper submission process.
Note that Only 4-page full papers will be accepted. Traditional "Abstract Submission" will NOT be accepted. No late news session.

IMPORTANT DATES

  • February 7, 20254-page full paper submission deadline
  • March 24, 2025Author notification

Organizers

The Institute of Electrical Engineers of Japan

Secretariat

ISPSD 2025 Secretariat
c/o Convention Linkage, Inc.
2-17 Sakuramachi, Chuo-ku, Kumamoto City 860-0805, JAPAN
Phone: +81-96-288-0882
Fax: +81-96-288-0883
Email: ISPSD2025@c-linkage.co.jp