CALL FOR PAPER
MAIN CATEGORIES OF INTEREST INCLUDE:
High Voltage Devices
High voltage silicon based discrete devices (>200V) such as SJ-MOSFETs, IGBTs, thyristors and pn-diodes
Low Voltage Devices and Power IC Device Technology
Low voltage silicon based discrete power devices (<200V) and devices for power ICs of all voltage ranges
Power IC Design
Circuit design and demonstration using power IC technology platform
GaN and Nitride-based Compound Materials: Device and Technology
GaN and compound semiconductor (e.g., AlN) based power devices, technology and integration
SiC and Other Materials: Device and Technology
SiC and other materials (e.g., Ga2O3, diamond) based power devices, technology and integration
Module and Packaging Technologies: System Integration in Package
Module and package technology for discrete power devices and power ICs
PAPER SUBMISSION
- IMPORTANT: ISPSD2025 has changed the paper submission process.
- Note that 4-page full paper submission is required.
Traditional "Abstract Submission" will NOT be accepted.
No late news session.
IMPORTANT DATES
- February 14, 20254-page full paper submission deadline
- March 24, 2025Author notification
- April 7, 2025Final submission deadline for final paper and copyright filing
