SHORT COURSE
SHORT COURSE PROGRAM
Date: June 1 (Sunday) 8:30-16:30
Short Course Chair: Dr. Tatsuya Nishiwaki, Toshiba Electronic Devices & Storage, Japan
08:40 - 9:30
200mm SiC Substrate development and 300mm SiC opportunities & challenges
Dr. Chao Gao, SICC, China
09:30 - 10:20
Technology for p-GaN gate High-voltage Gallium Nitride Transistors
Mr. Yasuhiro Uemoto, Infineon Technologies, Japan
10:50 - 11:40
Overview of Silicon Power Devices: History, Trends and Outlook
Prof. Wataru Saito, Kyushu University, Japan
11:40 - 12:30
Recent Requirements and Trends on Power IC Technology
Dr. Sang Gi Lee, DB Hitek, Korea
14:00 - 14:50
Power Electronics Design Automation Tools: Steps towards Realization
Dr. Tristan Evans, PE-Systems, Germany
14:50 - 15:40
AI-assisted Reliability Testing, Modeling, and Condition Monitoring for Power Semiconductor Modules
Prof. Huai Wang, Aalborg University, Denmark
15:40 - 16:30
Chip Embedded Power Package Technologies for AI and Vehicles
Mr. Yoshiaki Aizawa, AOI ELECTRONICS, Japan
